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| DISCRETE SEMICONDUCTORS DATA SHEET BFT93W PNP 4 GHz wideband transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 March 1994 Philips Semiconductors Philips Semiconductors Product specification PNP 4 GHz wideband transistor FEATURES * High power gain * Gold metallization ensures excellent reliability * SOT323 (S-mini) package. APPLICATIONS It is intended as a general purpose transistor for wideband applications up to 2 GHz. DESCRIPTION Silicon PNP transistor in a plastic, SOT323 (S-mini) package. The BFT93W uses the same crystal as the SOT23 version, BFT93. PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, 2 columns BFT93W 3 1 Top view 2 MBC870 BFT93W Marking code: X1. Fig.1 SOT323. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM F Tj Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency up to Ts = 93 C; note 1 IC = -30 mA; VCE = -5 V IC = 0; VCE = -5 V; f = 1 MHz IC = -30 mA; VCE = -5 V; f = 500 MHz CONDITIONS open emitter open base - - - - 20 - - - - - MIN. - - - - 50 1 4 15.5 2.4 - TYP. MAX. -15 -12 -50 300 - - - - - 150 pF GHz dB dB C V V mA mW UNIT maximum unilateral power gain IC = -30 mA; VCE = -5 V; f = 500 MHz; Tamb = 25 C noise figure junction temperature IC = -10 mA; VCE = -5 V; f = 500 MHz March 1994 2 Philips Semiconductors Product specification PNP 4 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature up to Ts = 93 C; note 1 CONDITIONS open emitter open base open collector - - - - - -65 - MIN. BFT93W MAX. -15 -12 -2 -50 300 +150 150 V V V UNIT mA mW C C THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 93 C; note 1 VALUE 190 UNIT K/W Note to the "Limiting values" and "Thermal characteristics" 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj = 25 C (unless otherwise specified). SYMBOL ICBO hFE fT Cc Ce Cre GUM PARAMETER collector cut-off current DC current gain transition frequency collector capacitance emitter capacitance feedback capacitance maximum unilateral power gain; note 1 CONDITIONS IE = 0; VCB = -5 V IC = -30 mA; VCE = -5 V IC = -30 mA; VCE = -5 V; f = 500 MHz; Tamb = 25 C IE = ie = 0; VCB = -5 V; f = 1 MHz IC = ic = 0; VEB = -0.5 V; f = 1 MHz IC = 0; VCE = -5 V; f = 1 MHz IC = -30 mA; VCE = -5 V; f = 500 MHz; Tamb = 25 C IC = -30 mA; VCE = -5 V; f = 1 GHz; Tamb = 25 C F noise figure s = opt; IC = -10 mA; VCE = -5 V; f = 500 MHz s = opt; IC = -10 mA; VCE = -5 V; f = 1 GHz Note - 20 - - - - - - - - MIN. - 50 4 1.2 1.4 1 15.5 10 2.4 3 TYP. - - - - - - - - - GHz pF pF pF dB dB dB dB MAX. -50 UNIT nA s 21 2 1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log ------------------------------------------------------------ dB. ( 1 - s 11 2 ) ( 1 - s 22 2 ) March 1994 3 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W 400 P tot (mW) 300 MLB424 60 h FE MLB425 40 200 20 100 0 0 50 100 150 200 T s ( o C) 0 0 10 20 30 I C (mA) 40 VCE = -5 V; Tj = 25 C. Fig.2 Power derating as a function of the soldering point temperature. Fig.3 DC current gain as a function of collector current, typical values. 2 C re (pF) 1.6 MLB426 6 fT (GHz) 4 MLB427 V CE = 10 V 5V 1.2 0.8 2 0.4 0 0 4 8 12 16 20 VCB (V) 0 1 10 I C (mA) 10 2 IC = 0; f = 1 MHz. f = 500 MHz; Tamb = 25 C. Fig.4 Feedback capacitance as a function of collector-base voltage, typical values. Fig.5 Transition frequency as a function of collector current, typical values. March 1994 4 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W 30 gain (dB) 20 MLB428 30 gain (dB) 20 MLB429 MSG G UM MSG 10 10 G UM 0 0 10 20 30 I C (mA) 40 0 0 10 20 30 I C (mA) 40 VCE = -5 V; f = 500 MHz. VCE = -5 V; f = 1 GHz. Fig.6 Gain as a function of collector current, typical values. Fig.7 Gain as a function of collector current, typical values. 50 gain (dB) 40 G UM 30 MSG MLB430 50 gain (dB) 40 G UM MSG 30 MLB431 20 20 10 G max 0 10 102 103 f (MHz) 104 10 G max 0 10 102 103 f (MHz) 104 VCE = -5 V; IC = -10 mA. VCE = -5 V; IC = -30 mA. Fig.8 Gain as a function of frequency, typical values. Fig.9 Gain as a function of frequency, typical values. March 1994 5 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W 90 o 1.0 1 135 o 0.5 2 45 o 0.8 0.6 3 GHz 0.4 0.2 180 o 0 0.2 0.5 1 2 5 0o 0 0.2 5 0.2 40 MHz 5 0.5 135 o 1 2 45 o MLB434 1.0 90 o VCE = -10 V; IC = -30 mA. Fig.10 Common emitter input reflection coefficient (s11), typical values. 90 o 135 o 45 o 40 MHz 180 o 50 40 30 20 10 3 GHz 0o 135 o 45 o 90 o VCE = -10 V; IC = -30 mA. MLB435 Fig.11 Common emitter forward transmission coefficient (s21), typical values. March 1994 6 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W 90 o 135 o 3 GHz 45 o 180 o 0.5 0.4 0.3 0.2 0.1 40 MHz 0o 135 o 45 o 90 o VCE = -10 V; IC = -30 mA. MLB436 Fig.12 Common emitter reverse transmission coefficient (s12), typical values. 90 o 1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 180 o 0 0.2 0.5 1 2 5 0o 0 0.2 5 3 GHz 0.2 40 MHz 5 0.5 135 o 1 2 45 o MLB437 1.0 90 o VCE = -10 V; IC = -30 mA. Fig.13 Common emitter output reflection coefficient (s22), typical values. March 1994 7 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W 6 F (dB) 1 GHz MLB432 6 F (dB) MLB433 IC = 30 mA 4 20 mA 10 mA 5 mA 4 500 MHz 2 2 0 1 10 I C (mA) 10 2 0 10 2 10 3 f (MHz) 10 4 VCE = -5 V. VCE = -5 V. Fig.14 Minimum noise figure as a function of collector current, typical values. Fig.15 Minimum noise figure as a function of frequency, typical values. March 1994 8 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W 90 o 1.0 1 135 o 0.5 2 45 o 0.8 0.6 F min = 2.40 dB opt 180 o 0.2 0.5 1 F = 3 dB 2 5 5 0.4 0.2 0o 0 0.2 0 0.2 F = 4 dB F = 5 dB 0.5 5 135 o 1 2 45 o MLB438 1.0 90 o VCE = -5 V; IC = -10 mA; f = 500 MHz; Zo = 50 . Fig.16 Common emitter noise figure circles, typical values. 90 o 1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 1 2 5 0o 0 0.2 F min = 2.90 dB opt 5 180 o 0 0.2 0.5 F = 3.5 dB 0.2 F = 4 dB F = 5 dB 0.5 135 o 1 MLB439 5 2 45 o 1.0 90 o VCE = -5 V; IC = -10 mA; f = 1 GHz; Zo = 50 . Fig.17 Common emitter noise figure circles, typical values. March 1994 9 Philips Semiconductors Product specification PNP 4 GHz wideband transistor SPICE parameters for the BFT93W crystal SEQUENCE No. PARAMETER 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19(1) 20(1) 21(1) 22 23 24 25 26 27 28 29 30 31 32 33 34 35(1) IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJC TR CJS VALUE 835.1 48.56 1.000 19.01 146.8 90.94 1.749 12.18 997.6 3.374 6.742 23.42 1.449 10.00 1.000 10.00 200.0 3.800 0.000 1.110 3.000 1.570 600.0 382.2 14.85 2.209 2.989 14.37 0.000 1.995 584.4 281.3 120.0 3.000 0.000 UNIT aA - - V mA fA - - m V mA fA - A m - EV - pF mV m ps - V mA deg pF mV m m ns F Cbe Ccb Cce L1 L2 L3 LB LE List of components (see Fig.18). DESIGNATION 2 100 100 0.34 0.10 0.34 0.60 0.60 VALUE QLB = 50; QLE = 50; QLB,E(f) = QLB,E(f/Fc); Fc = scaling frequency = 1 GHz. E L3 C be B L1 LB B' E' LE C' handbook, halfpage BFT93W SEQUENCE No. PARAMETER 36(1) 37(1) 38 Note VJS MJS FC VALUE 750.0 0.000 811.6 UNIT mV - m 1. These parameters have not been extracted, the default values are shown. C cb L2 C Cce MBC964 Fig.18 Package equivalent circuit SOT323. UNIT fF fF fF nH nH nH nH nH March 1994 10 Philips Semiconductors Product specification PNP 4 GHz wideband transistor Table 1 Common emitter scattering parameters: VCE = -5 V; IC = -5 mA. BFT93W s21 s12 s22 s11 f (MHz) MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) 40 100 200 300 400 500 600 700 800 900 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 0.759 0.711 0.630 0.586 0.566 0.557 0.551 0.546 0.543 0.541 0.541 0.549 0.559 0.565 0.566 0.575 0.594 0.613 0.623 0.618 0.621 -20.5 -49.0 -88.0 -113.6 -130.5 -141.8 -150.5 -157.1 -162.7 -167.6 -172.0 -179.4 174.8 170.3 165.6 160.5 156.3 153.7 151.4 148.2 144.5 11.294 10.079 8.082 6.355 5.116 4.266 3.653 3.193 2.838 2.551 2.323 1.975 1.737 1.555 1.420 1.310 1.217 1.135 1.064 1.019 0.975 165.0 147.7 126.7 113.1 104.1 97.5 92.2 87.7 83.9 80.4 77.4 71.7 66.4 61.7 57.7 54.2 51.1 47.7 44.8 41.7 39.3 0.023 0.050 0.076 0.090 0.099 0.107 0.113 0.120 0.127 0.133 0.140 0.153 0.168 0.183 0.197 0.213 0.228 0.242 0.255 0.271 0.289 78.5 64.5 51.2 45.1 42.9 42.8 43.7 44.9 46.2 47.6 49.1 51.6 53.8 55.2 56.8 58.3 59.7 60.6 60.9 61.5 61.9 0.945 0.834 0.631 0.491 0.403 0.349 0.316 0.293 0.277 0.263 0.249 0.223 0.212 0.215 0.220 0.215 0.208 0.217 0.242 0.264 0.275 -12.3 -27.8 -44.0 -52.8 -58.5 -62.5 -65.2 -66.8 -67.7 -68.1 -68.7 -71.8 -78.3 -84.5 -87.5 -91.0 -98.1 -107.7 -114.1 -116.9 -119.3 GUM (dB) 34.5 28.3 22.5 19.1 16.6 14.8 13.3 12.0 10.9 9.9 9.1 7.7 6.6 5.7 4.9 4.3 3.8 3.4 2.9 2.6 2.2 Table 2 Noise data: VCE = -5 V; IC = -5 mA. f (MHz) 500 1000 Fmin (dB) 1.80 2.55 opt (ratio) 0.307 0.358 (deg) 86.5 121.0 Rn 0.320 0.280 March 1994 11 Philips Semiconductors Product specification PNP 4 GHz wideband transistor Table 3 Common emitter scattering parameters: VCE = -5 V; IC = -10 mA. BFT93W s21 s12 s22 s11 f (MHz) MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) 40 100 200 300 400 500 600 700 800 900 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 0.608 0.571 0.538 0.531 0.531 0.532 0.534 0.533 0.532 0.534 0.535 0.545 0.557 0.561 0.563 0.574 0.593 0.612 0.620 0.616 0.618 -31.5 -72.1 -114.5 -136.1 -149.0 -157.3 -163.6 -168.6 -172.9 -176.8 179.7 173.7 169.2 165.5 161.2 156.6 153.0 150.6 148.8 146.0 142.3 18.195 15.044 10.475 7.676 5.989 4.907 4.161 3.613 3.195 2.866 2.603 2.206 1.931 1.724 1.570 1.447 1.343 1.251 1.171 1.122 1.074 160.2 138.8 117.4 106.0 98.6 93.2 88.9 85.1 81.8 78.8 76.2 71.2 66.6 62.2 58.5 55.2 52.4 49.2 46.3 43.2 40.7 0.020 0.041 0.059 0.070 0.079 0.088 0.097 0.106 0.116 0.125 0.135 0.153 0.172 0.191 0.208 0.227 0.244 0.260 0.274 0.290 0.309 75.6 60.6 51.1 49.3 50.2 51.8 53.8 55.4 56.9 58.1 59.3 61.0 62.0 62.3 62.7 63.2 63.7 64.0 63.5 63.3 63.2 0.900 0.725 0.490 0.360 0.287 0.245 0.221 0.204 0.192 0.179 0.167 0.145 0.140 0.149 0.154 0.150 0.148 0.165 0.192 0.213 0.223 -18.0 -38.4 -56.6 -66.3 -73.0 -77.9 -81.4 -83.2 -84.2 -84.5 -85.3 -90.1 -98.7 -104.6 -106.3 -109.4 -117.9 -127.5 -131.8 -132.1 -133.3 GUM (dB) 34.4 28.5 23.1 19.7 17.4 15.5 14.1 12.8 11.7 10.7 9.9 8.5 7.4 6.5 5.7 5.0 4.5 4.1 3.6 3.3 2.9 Table 4 Noise data: VCE = -5 V; IC = -10 mA. f (MHz) 500 1000 Fmin (dB) 2.40 2.90 opt (ratio) 0.304 0.321 (deg) 94.7 136.9 Rn 0.430 0.270 March 1994 12 Philips Semiconductors Product specification PNP 4 GHz wideband transistor Table 5 Common emitter scattering parameters: VCE = -5 V; IC = -20 mA. BFT93W s21 s12 s22 s11 f (MHz) MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) 40 100 200 300 400 500 600 700 800 900 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 0.450 0.475 0.502 0.516 0.526 0.530 0.534 0.535 0.536 0.538 0.541 0.554 0.566 0.571 0.573 0.585 0.604 0.624 0.633 0.626 0.629 -49.1 -99.1 -135.9 -151.8 -161.1 -167.1 -171.9 -175.7 -179.1 177.7 174.9 169.8 166.1 162.6 158.8 154.4 151.0 148.8 147.1 144.3 140.8 25.274 18.682 11.661 8.244 6.342 5.156 4.350 3.768 3.326 2.980 2.703 2.285 1.995 1.777 1.616 1.488 1.380 1.285 1.200 1.148 1.100 154.6 130.2 110.7 101.0 94.7 90.2 86.3 83.0 80.1 77.3 74.9 70.3 65.9 61.7 58.2 55.0 52.4 49.4 46.6 43.5 41.0 0.018 0.034 0.047 0.058 0.068 0.079 0.089 0.101 0.112 0.123 0.134 0.154 0.175 0.195 0.214 0.234 0.252 0.268 0.282 0.299 0.319 72.5 59.2 54.5 55.6 58.1 60.1 61.9 63.2 64.0 64.8 65.4 66.2 66.6 66.0 66.0 66.1 66.2 66.2 65.5 65.0 64.7 0.830 0.608 0.379 0.270 0.215 0.185 0.169 0.157 0.147 0.137 0.127 0.111 0.112 0.125 0.130 0.127 0.130 0.152 0.180 0.199 0.208 -24.1 -47.9 -67.2 -77.9 -86.1 -92.5 -96.7 -98.7 -99.8 -100.5 -101.9 -109.1 -118.8 -122.9 -123.1 -126.2 -135.1 -143.0 -144.7 -143.3 -143.7 GUM (dB) 34.1 28.5 23.3 20.0 17.7 15.8 14.4 13.1 12.0 11.1 10.2 8.8 7.7 6.8 6.0 5.3 4.8 4.4 3.9 3.5 3.2 Table 6 Noise data: VCE = -5 V; IC = -20 mA. f (MHz) 500 1000 Fmin (dB) 2.80 3.60 opt (ratio) 0.301 0.356 (deg) 100.8 152.2 Rn 0.610 0.280 March 1994 13 Philips Semiconductors Product specification PNP 4 GHz wideband transistor Table 7 Common emitter scattering parameters: VCE = -5 V; IC = -30 mA. BFT93W s21 s12 s22 s11 f (MHz) MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) 40 100 200 300 400 500 600 700 800 900 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 0.382 0.453 0.502 0.521 0.532 0.537 0.542 0.543 0.545 0.548 0.552 0.565 0.577 0.584 0.586 0.598 0.620 0.639 0.646 0.642 0.644 -62.3 -113.1 -144.8 -158.0 -165.8 -170.8 -174.9 -178.2 178.7 176.0 173.2 168.6 165.0 161.7 157.9 153.6 150.3 148.1 146.3 143.4 139.8 28.063 19.479 11.682 8.162 6.248 5.069 4.269 3.692 3.258 2.917 2.644 2.233 1.948 1.734 1.577 1.451 1.345 1.251 1.169 1.118 1.071 151.4 126.1 107.7 98.8 92.9 88.6 84.9 81.7 78.8 76.1 73.8 69.2 64.9 60.8 57.3 54.2 51.5 48.7 46.0 43.0 40.5 0.016 0.030 0.043 0.054 0.065 0.076 0.088 0.099 0.111 0.122 0.133 0.154 0.175 0.195 0.214 0.234 0.252 0.269 0.284 0.300 0.321 71.2 58.8 56.8 58.9 61.4 63.4 65.0 65.8 66.4 67.0 67.4 68.0 68.2 67.5 67.3 67.3 67.5 67.5 66.6 66.2 65.7 0.781 0.543 0.327 0.232 0.185 0.161 0.148 0.139 0.131 0.123 0.114 0.101 0.105 0.119 0.125 0.124 0.129 0.152 0.181 0.200 0.210 -27.1 -51.8 -70.7 -81.5 -89.9 -96.5 -100.5 -102.3 -103.2 -103.6 -104.8 -112.5 -121.9 -125.4 -125.0 -128.3 -137.0 -144.6 -146.1 -144.7 -145.0 GUM (dB) 33.7 28.3 23.1 19.8 17.5 15.7 14.2 13.0 11.9 10.9 10.1 8.7 7.6 6.7 5.8 5.2 4.8 4.3 3.8 3.4 3.1 Table 8 Noise data: VCE = -5 V; IC = -30 mA. f (MHz) 500 1000 Fmin (dB) 3.40 4.20 opt (ratio) 0.308 0.380 (deg) 104.2 164.0 Rn 0.830 0.310 March 1994 14 Philips Semiconductors Product specification PNP 4 GHz wideband transistor Table 9 Common emitter scattering parameters: VCE = -10 V; IC = -5 mA. BFT93W s21 s12 s22 s11 f (MHz) MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) 40 100 200 300 400 500 600 700 800 900 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 0.837 0.781 0.670 0.592 0.547 0.523 0.507 0.495 0.487 0.481 0.478 0.483 0.493 0.499 0.501 0.509 0.529 0.550 0.564 0.564 0.569 -16.8 -40.2 -73.9 -98.6 -116.1 -128.7 -138.6 -146.1 -152.5 -158.1 -163.1 -171.8 -178.2 176.9 172.0 166.5 161.8 158.8 156.7 153.7 150.0 11.098 10.061 8.331 6.727 5.490 4.616 3.971 3.476 3.094 2.782 2.532 2.155 1.895 1.694 1.541 1.418 1.317 1.228 1.148 1.100 1.051 166.4 150.4 130.4 116.7 107.3 100.5 94.9 90.3 86.3 82.6 79.5 73.7 68.4 63.6 59.6 55.9 52.6 49.0 45.9 42.8 40.2 0.020 0.046 0.073 0.088 0.098 0.106 0.114 0.121 0.129 0.136 0.143 0.156 0.171 0.185 0.198 0.212 0.224 0.236 0.246 0.259 0.274 80.4 67.6 54.7 48.3 45.8 45.2 45.6 46.4 47.3 48.2 49.3 51.0 52.4 53.2 54.4 55.5 56.5 57.2 57.5 58.2 58.9 0.947 0.856 0.674 0.537 0.447 0.389 0.352 0.327 0.309 0.294 0.279 0.250 0.234 0.232 0.233 0.227 0.215 0.215 0.232 0.253 0.262 -10.2 -23.6 -38.2 -46.3 -51.2 -54.5 -56.5 -57.6 -58.0 -57.8 -57.8 -59.2 -63.8 -69.2 -71.8 -74.1 -79.5 -88.7 -96.4 -100.1 -102.7 GUM (dB) 36.0 29.9 23.6 19.9 17.3 15.4 13.8 12.5 11.4 10.4 9.5 8.1 7.0 6.1 5.3 4.6 4.0 3.6 3.1 2.8 2.4 Table 10 Noise data: VCE = -10 V; IC = -5 mA. f (MHz) 500 1000 Fmin (dB) 2.00 2.50 opt (ratio) 0.340 0.380 (deg) 73.0 105.0 Rn 0.440 0.360 March 1994 15 Philips Semiconductors Product specification PNP 4 GHz wideband transistor Table 11 Common emitter scattering parameters: VCE = -10 V; IC = -10 mA. BFT93W s21 s12 s22 s11 f (MHz) MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) 40 100 200 300 400 500 600 700 800 900 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 0.744 0.666 0.556 0.507 0.485 0.474 0.469 0.465 0.461 0.459 0.460 0.469 0.482 0.488 0.489 0.501 0.522 0.543 0.557 0.556 0.560 -24.2 -56.4 -95.4 -119.1 -134.4 -144.5 -152.4 -158.4 -163.5 -168.1 -172.3 -179.3 175.4 171.5 167.2 162.2 158.0 155.4 153.8 151.0 147.6 18.034 15.339 11.171 8.353 6.576 5.412 4.597 3.997 3.537 3.170 2.875 2.435 2.130 1.898 1.723 1.584 1.469 1.367 1.278 1.222 1.168 162.0 142.3 121.0 109.0 101.2 95.6 91.1 87.2 83.9 80.8 78.2 73.1 68.4 64.1 60.4 57.0 54.0 50.7 47.8 44.7 42.1 0.019 0.040 0.059 0.071 0.081 0.090 0.099 0.108 0.118 0.128 0.137 0.155 0.173 0.191 0.207 0.224 0.239 0.253 0.264 0.278 0.295 77.2 63.6 53.5 50.8 51.0 52.2 53.7 54.9 56.1 57.0 57.8 59.1 59.8 59.7 59.9 60.3 60.6 60.7 60.3 60.4 60.4 0.902 0.757 0.533 0.398 0.319 0.272 0.243 0.224 0.209 0.196 0.183 0.157 0.144 0.147 0.150 0.144 0.134 0.140 0.162 0.183 0.192 -15.2 -33.0 -49.6 -57.9 -63.2 -66.9 -69.2 -70.3 -70.3 -69.7 -69.3 -71.0 -77.4 -83.7 -85.2 -87.1 -94.3 -106.3 -113.7 -115.3 -116.6 GUM (dB) 35.9 30.0 24.0 20.5 18.0 16.1 14.6 13.3 12.2 11.2 10.4 8.9 7.8 6.8 6.0 5.3 4.8 4.3 3.9 3.5 3.1 Table 12 Noise data: VCE = -10 V; IC = -10 mA. f (MHz) 500 1000 Fmin (dB) 2.40 2.90 opt (ratio) 0.270 0.350 (deg) 83.0 115.0 Rn 0.400 0.350 March 1994 16 Philips Semiconductors Product specification PNP 4 GHz wideband transistor Table 13 Common emitter scattering parameters: VCE = -10 V; IC = -20 mA. BFT93W s21 s12 s22 s11 f (MHz) MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) 40 100 200 300 400 500 600 700 800 900 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 0.655 0.568 0.487 0.463 0.456 0.453 0.453 0.451 0.451 0.452 0.454 0.467 0.482 0.490 0.493 0.505 0.528 0.550 0.563 0.562 0.565 -33.6 -73.8 -113.4 -134.1 -146.7 -154.7 -161.0 -165.7 -169.9 -173.7 -177.3 176.6 172.4 168.8 164.8 159.8 155.9 153.6 151.9 149.2 145.8 25.207 19.459 12.634 9.050 6.997 5.702 4.818 4.171 3.683 3.297 2.986 2.521 2.200 1.956 1.774 1.630 1.509 1.405 1.312 1.253 1.199 156.9 133.9 113.7 103.5 96.9 92.1 88.2 84.8 81.8 79.0 76.6 71.9 67.6 63.6 60.1 56.8 54.1 51.0 48.1 45.2 42.6 0.018 0.035 0.050 0.061 0.072 0.082 0.093 0.104 0.115 0.126 0.137 0.157 0.176 0.195 0.212 0.230 0.245 0.260 0.273 0.287 0.305 74.2 61.0 54.9 55.1 56.9 58.5 60.0 61.0 61.8 62.4 62.9 63.4 63.4 62.8 62.7 62.7 62.8 62.7 62.2 62.0 61.7 0.840 0.644 0.416 0.299 0.236 0.200 0.179 0.165 0.155 0.143 0.132 0.110 0.103 0.110 0.114 0.109 0.103 0.115 0.141 0.160 0.169 -20.3 -41.3 -58.0 -66.3 -72.0 -76.3 -79.0 -79.9 -79.9 -79.0 -78.5 -81.6 -90.5 -97.4 -98.0 -100.1 -109.7 -122.8 -128.2 -127.8 -128.3 GUM (dB) 35.8 29.8 24.0 20.6 18.2 16.3 14.8 13.5 12.4 11.4 10.6 9.2 8.0 7.1 6.2 5.6 5.0 4.6 4.1 3.7 3.4 Table 14 Noise data: VCE = -10 V; IC = -20 mA. f (MHz) 500 1000 Fmin (dB) 3.00 3.60 opt (ratio) 0.240 0.320 (deg) 98.0 131.0 Rn 0.440 0.400 March 1994 17 Philips Semiconductors Product specification PNP 4 GHz wideband transistor Table 15 Common emitter scattering parameters: VCE = -10 V; IC = -30 mA. BFT93W s21 s12 s22 s11 f (MHz) MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE MAGNITUDE ANGLE (ratio) (deg) (ratio) (deg) (ratio) (deg) (ratio) (deg) 40 100 200 300 400 500 600 700 800 900 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 0.617 0.529 0.464 0.449 0.446 0.446 0.448 0.449 0.450 0.452 0.456 0.472 0.488 0.498 0.502 0.516 0.539 0.562 0.575 0.573 0.576 -39.1 -82.4 -120.8 -139.7 -151.0 -158.1 -163.5 -167.8 -171.7 -175.1 -178.5 175.9 171.7 168.1 164.0 159.3 155.4 152.9 151.2 148.4 144.7 28.045 20.389 12.630 8.920 6.853 5.569 4.694 4.060 3.579 3.204 2.902 2.448 2.134 1.898 1.721 1.580 1.464 1.362 1.273 1.217 1.164 153.9 129.6 110.4 101.0 94.8 90.3 86.5 83.3 80.4 77.7 75.4 70.8 66.6 62.5 59.1 56.0 53.2 50.2 47.4 44.5 42.0 0.017 0.032 0.047 0.058 0.069 0.081 0.092 0.103 0.115 0.126 0.136 0.157 0.176 0.194 0.211 0.229 0.245 0.260 0.272 0.287 0.305 73.1 60.3 56.4 57.3 59.4 60.9 62.2 63.0 63.6 63.8 64.1 64.3 64.2 63.6 63.4 63.5 63.7 63.6 63.0 62.9 62.6 0.797 0.583 0.364 0.259 0.204 0.174 0.158 0.147 0.139 0.131 0.122 0.103 0.097 0.106 0.112 0.108 0.103 0.116 0.141 0.162 0.172 -22.6 -44.1 -59.3 -66.3 -71.2 -75.0 -77.2 -77.7 -77.1 -75.9 -75.0 -77.7 -87.1 -94.6 -95.7 -98.0 -108.1 -121.5 -127.4 -127.3 -128.1 GUM (dB) 35.4 29.4 23.7 20.3 17.9 16.0 14.5 13.2 12.1 11.2 10.3 8.9 7.8 6.9 6.0 5.4 4.8 4.4 3.9 3.5 3.2 Table 16 Noise data: VCE = -10 V; IC = -30 mA. f (MHz) 500 1000 Fmin (dB) 3.60 4.20 opt (ratio) 0.250 0.310 (deg) 101.0 143.0 Rn 0.550 0.480 March 1994 18 Philips Semiconductors Product specification PNP 4 GHz wideband transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads BFT93W SOT323 D B E A X y HE vMA 3 Q A A1 c 1 e1 e bp 2 wM B Lp detail X 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 OUTLINE VERSION SOT323 REFERENCES IEC JEDEC EIAJ SC-70 EUROPEAN PROJECTION ISSUE DATE 97-02-28 March 1994 19 Philips Semiconductors Product specification PNP 4 GHz wideband transistor DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values BFT93W This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1994 20 Philips Semiconductors Product specification PNP 4 GHz wideband transistor NOTES BFT93W March 1994 21 Philips Semiconductors Product specification PNP 4 GHz wideband transistor NOTES BFT93W March 1994 22 Philips Semiconductors Product specification PNP 4 GHz wideband transistor NOTES BFT93W March 1994 23 Philips Semiconductors - a worldwide company Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428) BUENOS AIRES, Tel. (541)786 7633, Fax. (541)786 9367 Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. (02)805 4455, Fax. (02)805 4466 Austria: Triester Str. 64, A-1101 WIEN, P.O. Box 213, Tel. (01)60 101-1236, Fax. (01)60 101-1211 Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands, Tel. (31)40 783 749, Fax. 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(03)757 4880 Mexico: Philips Components, 5900 Gateway East, Suite 200, EL PASO, TX 79905, Tel. 9-5(800)234-7381, Fax. (708)296-8556 Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Tel. (040)78 37 49, Fax. (040)78 83 99 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. (09)849-4160, Fax. (09)849-7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. (22)74 8000, Fax. (22)74 8341 Pakistan: Philips Markaz, M.A. Jinnah Rd., KARACHI 3, Tel. (021)577 039, Fax. (021)569 1832 Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc, 106 Valero St. Salcedo Village, P.O. Box 911, MAKATI, Metro MANILA, Tel. (02)810 0161, Fax. (02)817 3474 Portugal: Av. Eng. Duarte Pacheco 6, 1009 LISBOA Codex, Tel. (01)683 121, Fax. (01)658 013 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. (65)350 2000, Fax. (65)251 6500 South Africa: 195-215 Main Road, Martindale, P.O. Box 7430,JOHANNESBURG 2000, Tel. (011)470-5433, Fax. (011)470-5494 Spain: Balmes 22, 08007 BARCELONA, Tel. (03)301 6312, Fax. (03)301 42 43 Sweden: Kottbygatan 7, Akalla. S-164 85 STOCKHOLM, Tel. (0)8-632 2000, Fax. (0)8-632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. (01)488 2211, Fax. (01)481 7730 Taiwan: 69, Min Sheng East Road, Sec 3, P.O. Box 22978, TAIPEI 10446, Tel. (2)509 7666, Fax. (2)500 5899 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 60/14 MOO 11, Bangna - Trad Road Km. 3 Prakanong, BANGKOK 10260, Tel. (2)399-3280 to 9, (2)398-2083, Fax. (2)398-2080 Turkey: Talatpasa Cad. No. 5, 80640 LEVENT/ISTANBUL, Tel. (0212)279 2770, Fax. (0212)269 3094 United Kingdom: Philips Semiconductors Limited, P.O. Box 65, Philips House, Torrington Place, LONDON, WC1E 7HD, Tel. (071)436 41 44, Fax. (071)323 03 42 United States: INTEGRATED CIRCUITS: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. (800)234-7381, Fax. (708)296-8556 DISCRETE SEMICONDUCTORS: 2001 West Blue Heron Blvd., P.O. Box 10330, RIVIERA BEACH, FLORIDA 33404, Tel. (800)447-3762 and (407)881-3200, Fax. (407)881-3300 Uruguay: Coronel Mora 433, MONTEVIDEO, Tel. (02)70-4044, Fax. (02)92 0601 For all other countries apply to: Philips Semiconductors, International Marketing and Sales, Building BAF-1, P.O. Box 218, 5600 MD, EINDHOVEN, The Netherlands, Telex 35000 phtcnl, Fax. +31-40-724825 SCD28 (c) Philips Electronics N.V. 1994 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 9397 728 50011 Philips Semiconductors |
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